*********************************************************** * * PBSS9110D * * Nexperia * * Low VCEsat PNP (BISS) Transistor * IC = 5,2 A * VCEO = 100 V * hFE = 150 - 450 @ 5V/250mA * * * * * Package pinning does not match Spice model pinning. * Package: SOT 457 * * Package Pin 1;4: Collector;Emitter * Package Pin 2;5: Collector;Collector * Package Pin 3;6: Base;Collector * * * Extraction date (week/year): 22/2006 * Spicemodel does not include temperature dependency * ********************************************************** *# * Please note: Diode D1 is dedicated to improve modeling in reverse * mode of operation and does not reflect a physical device. * .SUBCKT PBSS9110D 1 2 3 Q1 1 2 3 PBSS9110D D1 1 2 DIODE * .MODEL PBSS9110D PNP + IS = 3.155E-013 + NF = 0.9898 + ISE = 3.686E-014 + NE = 1.374 + BF = 300 + IKF = 0.4 + VAF = 25 + NR = 0.988 + ISC = 5E-014 + NC = 2.742 + BR = 18 + IKR = 5 + VAR = 15 + RB = 10 + IRB = 0.0007 + RBM = 1.85 + RE = 0.06 + RC = 0.11 + XTB = 0 + EG = 1.11 + XTI = 3 + CJE = 2.165E-010 + VJE = 0.8147 + MJE = 0.4025 + TF = 1.125E-009 + XTF = 1.2 + VTF = 2.2 + ITF = 0.9 + PTF = 0 + CJC = 4.783E-011 + VJC = 1 + MJC = 0.53 + XCJC = 1 + TR = 4E-008 + CJS = 0 + VJS = 0.75 + MJS = 0.333 + FC = 0.99 .MODEL DIODE D + IS = 9.765E-014 + N = 1.021 + BV = 1000 + IBV = 0.001 + RS = 1500 + CJO = 0 + VJ = 1 + M = 0.5 + FC = 0 + TT = 0 + EG = 1.11 + XTI = 3 .ENDS *