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*
* PBSS8510PA
*
* Nexperia
*
* Low VCEsat NPN (BISS) Transistor
* IC   = 5,2 A
* VCEO = 100 V 
* hFE  = typ. 145  @ 2V/2A
*
*
*
*
* Package pinning does not match Spice model pinning.
* Package: SOT 1061
* 
* Package Pin 1: Base
* Package Pin 2: Collector
* Package Pin 3: Emitter
* Package Pin 4: Collector
*
* Extraction date (week/year): 20/2009
* Spicemodel does not include temperature dependency
*
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*#
* Please note: Diode D1 is dedicated to improve modeling in reverse
* mode of operation and does not reflect a physical device.
*
.SUBCKT PBSS8510PA 1 2 3
Q1 1 2 3 PBSS8510PA 
D1 2 1 DIODE
* 
.MODEL PBSS8510PA NPN 
+ IS = 1.167E-012 
+ NF = 0.9645 
+ ISE = 2.594E-014 
+ NE = 1.301 
+ BF = 314 
+ IKF = 1.3 
+ VAF = 12.32 
+ NR = 0.9643 
+ ISC = 3.959E-013 
+ NC = 1.352 
+ BR = 73.4 
+ IKR = 31.66 
+ VAR = 29.35 
+ RB = 20.95 
+ IRB = 0.0007091 
+ RBM = 2.312 
+ RE = 0.02123 
+ RC = 0.02556 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 8.438E-010 
+ VJE = 0.7569 
+ MJE = 0.3563 
+ TF = 9E-010 
+ XTF = 8 
+ VTF = 1 
+ ITF = 1 
+ PTF = 0 
+ CJC = 7.251E-011 
+ VJC = 0.16 
+ MJC = 0.3401 
+ XCJC = 1 
+ TR = 1.7E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.98 
.MODEL DIODE D 
+ IS = 7.574E-014 
+ N = 0.9624 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 437.5 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
*