*********************************************************** * * PBSS8110T * * Nexperia * * Low VCEsat NPN (BISS) Transistor * IC = 1 A * VCEO = 100 V * hFE = 150 - 500 @ 10V/250mA * * * * * Package pinning does not match Spice model pinning. * Package: SOT 23 * * Package Pin 1: Base * Package Pin 2: Emitter * Package Pin 3: collector * * * Extraction date (week/year): 08/2004 * Spicemodel does not include temperature dependency * ********************************************************** *# * Please note: Diode D1 is dedicated to improve modeling in reverse * mode of operation and does not reflect a physical device. * .SUBCKT PBSS8110T 1 2 3 Q1 1 2 3 PBSS8110T D1 2 1 DIODE * .MODEL PBSS8110T NPN + IS = 3.138E-013 + NF = 0.9857 + ISE = 4.405E-015 + NE = 1.299 + BF = 300 + IKF = 0.38 + VAF = 23 + NR = 0.9809 + ISC = 1.35E-016 + NC = 0.998 + BR = 55 + IKR = 2.8 + VAR = 48 + RB = 10 + IRB = 0.000431 + RBM = 5.92 + RE = 0.05 + RC = 0.058 + XTB = 0 + EG = 1.11 + XTI = 3 + CJE = 2.86E-010 + VJE = 0.7299 + MJE = 0.3486 + TF = 6E-010 + XTF = 27 + VTF = 1.5 + ITF = 0.6 + PTF = 0 + CJC = 2.39E-011 + VJC = 0.2734 + MJC = 0.3734 + XCJC = 1 + TR = 5.1E-008 + CJS = 0 + VJS = 0.75 + MJS = 0.333 + FC = 0.78 .MODEL DIODE D + IS = 1.185E-013 + N = 1 + BV = 1000 + IBV = 0.001 + RS = 500 + CJO = 0 + VJ = 1 + M = 0.5 + FC = 0 + TT = 0 + EG = 1.11 + XTI = 3 .ENDS *