***********************************************************
*
* PBSS5612PA
*
* Nexperia
*
* Low VCEsat PNP (BISS) Transistor
* IC   = 6 A
* VCEO = 12 V 
* hFE  = typ.290  @ 2V/2A
*
*
*
*
* Package pinning does not match Spice model pinning.
* Package: SOT 1061
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* Extraction date (week/year): 20/2009
* Spicemodel does not include temperature dependency
*
**********************************************************
*#
* Please note: Diode D1 is dedicated to improve modeling in reverse
* mode of operation and does not reflect a physical device.
*
.SUBCKT PBSS5612PA 1 2 3
Q1 1 2 3 PBSS5612PA 
D1 1 2 DIODE
*
.MODEL PBSS5612PA PNP 
+ IS = 2.641E-012 
+ NF = 0.9696 
+ ISE = 2.307E-013 
+ NE = 1.523 
+ BF = 386 
+ IKF = 5.834 
+ VAF = 13.49 
+ NR = 0.9701 
+ ISC = 1.054E-014 
+ NC = 1.216 
+ BR = 280.5 
+ IKR = 1.492 
+ VAR = 10.6 
+ RB = 9 
+ IRB = 0.0007 
+ RBM = 1.1 
+ RE = 0.02527 
+ RC = 0.01708 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 7.085E-010 
+ VJE = 0.8217 
+ MJE = 0.4024 
+ TF = 4.2E-009 
+ XTF = 0.5 
+ VTF = 15 
+ ITF = 0.6 
+ PTF = 3 
+ CJC = 3.854E-010 
+ VJC = 0.4783 
+ MJC = 0.329 
+ XCJC = 0.8 
+ TR = 1E-010 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.75 
.MODEL DIODE D 
+ IS = 2.312E-013 
+ N = 1.216 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 1.719E+004 
+ CJO = 0 
+ VJ = 1 
+ M = 0.9 
+ FC = 0 
+ TT = 0 
+ EG = 1.1 
+ XTI = 3 
.ENDS
*