***********************************************************
*
* PBSS5260QA
*
* Nexperia
*
* Low VCEsat PNP (BISS) Transistor
* Ic   =  1,7 A 
* Vceo = 60 V 
* hFE  = 185   @ 2V/500 mA (typical)
*
* 
*
*
* Package pinning does not match Spice model pinning.
* Package: SOT 1215
* 
* Package Pin 1: Base   
* Package Pin 2: Emitter      
* Package Pin 3: Collector 
* 
*
* Extraction date (week/year): 11/2013
* Spicemodel does not include temperature dependency
*
**********************************************************
*#
* Please note: Diode D1, Transistor Q2 and Resistor RQ 
* are dedicated to improve modeling of quasi
* saturation area and reverse mode operation
* and do not reflect physical devices.
*
.SUBCKT PBSS5260QA 1 2 3
Q1 1 2 3 MAIN 0.6452
Q2 11 2 3 MAIN 0.3548
D1 1 2 DIODE
RQ 1 11 4.227
*
.MODEL MAIN PNP
+ IS = 1.825E-013
+ NF = 0.9839
+ ISE = 2.544E-014
+ NE = 1.316
+ BF = 315
+ IKF = 0.8
+ VAF = 27.91
+ NR = 0.9828
+ ISC = 1.03E-013
+ NC = 1.161
+ BR = 22
+ IKR = 1.844
+ VAR = 18.52
+ RB = 14.5
+ IRB = 0.0008
+ RBM = 6.2
+ RE = 0.04798
+ RC = 0.0356
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 1.178E-010
+ VJE = 0.7359
+ MJE = 0.3676
+ TF = 1.196E-009
+ XTF = 12
+ VTF = 1.275
+ ITF = 1.125
+ PTF = 0
+ CJC = 4.447E-011
+ VJC = 0.6311
+ MJC = 0.4536
+ XCJC = 1
+ TR = 2.6E-008
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.3458
.MODEL DIODE D
+ IS = 1.795E-017
+ N = 0.7442
+ BV = 1000
+ IBV = 0.001
+ RS = 1.832E+004
+ CJO = 0
+ VJ = 1
+ M = 0.5
+ FC = 0
+ TT = 0
+ EG = 1.11
+ XTI = 3
.ENDS
*