*********************************************************** * * PBSS4160PAN * * Nexperia * * Double Low VCEsat NPN/NPN Transistor * IC = 1 A * VCEO = 60 V * hFE = typ. 220 @ 2V/500mA * * * * * Package pinning does not match Spice model pinning. * Package: SOT 1118 * * Package Pin 1/4: Emitter TR1/TR2 * Package Pin 2/5: Base TR1/TR2 * Package Pin 6/3: Collector TR1/TR2 * Package Pin 8/7: Collector TR1/TR2 * * Extraction date (week/year): 43/2012 * Spicemodel does not include temperature dependency * ********************************************************** *# * Please note: The following model is to be used twice in * schematic due to equality of both Transistors. * * Diode D1 is dedicated to improve modeling in reverse * mode of operation and does not reflect a physical device. * .SUBCKT PBSS4160PAN 1 2 3 Q1 1 2 3 MAIN D1 2 1 DIODE * .MODEL MAIN NPN + IS = 1.087E-013 + NF = 0.971 + ISE = 8.291E-016 + NE = 1.172 + BF = 490 + IKF = 0.2617 + VAF = 12.05 + NR = 0.9713 + ISC = 1.622E-015 + NC = 1.037 + BR = 91.77 + IKR = 3.258 + VAR = 39 + RB = 29 + IRB = 0.00025 + RBM = 1.47 + RE = 0.04181 + RC = 0.09036 + XTB = 0 + EG = 1.11 + XTI = 3 + CJE = 1.084E-010 + VJE = 0.6513 + MJE = 0.3226 + TF = 9.123E-010 + XTF = 35 + VTF = 1.779 + ITF = 1.719 + PTF = 0 + CJC = 1.199E-011 + VJC = 0.1376 + MJC = 0.2272 + XCJC = 1 + TR = 3.27E-008 + CJS = 0 + VJS = 0.75 + MJS = 0.333 + FC = 0.8681 .MODEL DIODE D + IS = 7.145E-014 + N = 1.063 + BV = 1000 + IBV = 0.001 + RS = 271.8 + CJO = 0 + VJ = 1 + M = 0.5 + FC = 0 + TT = 0 + EG = 1.11 + XTI = 3 .ENDS *