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*
* PBSS306NX
*
* Nexperia
*
* Low VCEsat NPN (BISS) Transistor
* IC   = 4,5 A
* VCEO = 100 V 
* hFE  = min.200 typ.330 @ 2V/500mA
*
*
*
*
* Package pinning does not match Spice model pinning.
* Package: SOT 89
* 
* Package Pin 1: Emitter
* Package Pin 2: Collector 
* Package Pin 3: Base
*
*
* Extraction date (week/year): 07/2007
* Spicemodel does not include temperature dependency
*
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*#
* Please note: Diode D1 is dedicated to improve modeling in reverse
* mode of operation and does not reflect a physical device.
*
.SUBCKT PBSS306NX 1 2 3
Q1 1 2 3 PBSS306NX
D1 2 1 DIODE 
*
.MODEL PBSS306NX NPN 
+ IS = 1.216E-012 
+ NF = 0.9839 
+ ISE = 2.083E-014 
+ NE = 1.563 
+ BF = 350 
+ IKF = 1.2 
+ VAF = 16 
+ NR = 0.985 
+ ISC = 1E-018 
+ NC = 0.7632 
+ BR = 60 
+ IKR = 5 
+ VAR = 19 
+ RB = 20 
+ IRB = 0.00075 
+ RBM = 0.7 
+ RE = 0.016 
+ RC = 0.014 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.057E-009 
+ VJE = 0.7297 
+ MJE = 0.3396 
+ TF = 9E-010 
+ XTF = 5 
+ VTF = 2 
+ ITF = 1.6 
+ PTF = 0 
+ CJC = 9.184E-011 
+ VJC = 0.3713 
+ MJC = 0.4127 
+ XCJC = 1 
+ TR = 1.6E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.6 
.MODEL DIODE D 
+ IS = 1.967E-013 
+ N = 0.9858 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 202 
+ CJO = 0 
+ VJ = 1 
+ M = 0.9 
+ FC = 0 
+ TT = 0 
+ EG = 1.1 
+ XTI = 3 
.ENDS
*