*********************************************************** * * PBSS303ND * * Nexperia * * Low VCEsat NPN (BISS) Transistor * IC = 3 A * VCEO = 60 V * hFE = min.120 typ.185 @ 2V/3A * * * * * Package pinning does not match Spice model pinning. * Package: SOT 457 * * Package Pin 1;4: Collector;Emitter * Package Pin 2;5: Collector;Collector * Package Pin 3;6: Base;Collector * * * Extraction date (week/year): 12/2006 * Spicemodel does not include temperature dependency * ********************************************************** *# * Please note: Diode D1 is dedicated to improve modeling in reverse * mode of operation and does not reflect a physical device. * .SUBCKT PBSS303ND 1 2 3 Q1 1 2 3 PBSS303ND D1 2 1 DIODE * .MODEL PBSS303ND NPN + IS = 7.902E-013 + NF = 0.9608 + ISE = 3.296E-014 + NE = 1.749 + BF = 563 + IKF = 1.5 + VAF = 10 + NR = 0.961 + ISC = 1E-018 + NC = 3 + BR = 60 + IKR = 5 + VAR = 50 + RB = 22.2 + IRB = 0.0006 + RBM = 2.3 + RE = 0.03 + RC = 0.025 + XTB = 0 + EG = 1.11 + XTI = 3 + CJE = 5.681E-010 + VJE = 0.7622 + MJE = 0.3574 + TF = 1.8E-009 + XTF = 3 + VTF = 0.5 + ITF = 0.6 + PTF = 0 + CJC = 1.16E-010 + VJC = 0.01835 + MJC = 0.1902 + XCJC = 1 + TR = 1.5E-009 + CJS = 0 + VJS = 0.75 + MJS = 0.333 + FC = 0.1 .MODEL DIODE D + IS = 1.236E-014 + N = 1 + BV = 1000 + IBV = 0.001 + RS = 2042 + CJO = 0 + VJ = 1 + M = 0.5 + FC = 0 + TT = 0 + EG = 1.11 + XTI = 3 .ENDS *