*********************************************************** * * PBSS302PD * * Nexperia * * Low VCEsat PNP (BISS) Transistor * IC = 4 A * VCEO = 40 V * hFE = min.175 @ 2V/2A * * * * * Package pinning does not match Spice model pinning. * Package: SOT 457 * * Package Pin 1;4: Collector;Emitter * Package Pin 2;5: Collector;Collector * Package Pin 3;6: Base;Collector * * * Extraction date (week/year): 42/2005 * Spicemodel does not include temperature dependency * ********************************************************** *# * Please note: Diode D1 is dedicated to improve modeling in reverse * mode of operation and does not reflect a physical device. * .SUBCKT PBSS302PD 1 2 3 Q1 1 2 3 PBSS302PD D1 1 2 DIODE * .MODEL PBSS302PD PNP + IS = 6.033E-013 + NF = 0.9576 + ISE = 4.885E-014 + NE = 1.233 + BF = 380 + IKF = 1.95 + VAF = 12.8 + NR = 0.9592 + ISC = 1E-018 + NC = 3 + BR = 68 + IKR = 1.5 + VAR = 6.9 + RB = 15.2 + IRB = 0.001 + RBM = 0.75 + RE = 0.035 + RC = 0.018 + XTB = 0 + EG = 1.11 + XTI = 3 + CJE = 4.977E-010 + VJE = 0.8119 + MJE = 0.3949 + TF = 2.35E-009 + XTF = 15 + VTF = 5 + ITF = 10 + PTF = 0 + CJC = 1.698E-010 + VJC = 0.4041 + MJC = 0.2934 + XCJC = 1 + TR = 2.5E-009 + CJS = 0 + VJS = 0.75 + MJS = 0.333 + FC = 0.8 .MODEL DIODE D + IS = 2.586E-013 + N = 1.197 + BV = 1000 + IBV = 0.001 + RS = 1000 + CJO = 0 + VJ = 1 + M = 0.9 + FC = 0 + TT = 0 + EG = 1.1 + XTI = 3 .ENDS *