*********************************************************** * * PBSS302ND * * Nexperia * * Low VCEsat NPN (BISS) Transistor * IC = 4 A * VCEO = 40 V * hFE = min.250 typ.385 @ 2V/2A * * * * * Package pinning does not match Spice model pinning. * Package: SOT 457 * * Package Pin 1;4: Collector;Emitter * Package Pin 2;5: Collector;Collector * Package Pin 3;6: Base;Collector * * * Extraction date (week/year): 42/2005 * Spicemodel does not include temperature dependency * ********************************************************** *# * Please note: Diode D1 is dedicated to improve modeling in reverse * mode of operation and does not reflect a physical device. * .SUBCKT PBSS302ND 1 2 3 Q1 1 2 3 PBSS302ND D1 2 1 DIODE * .MODEL PBSS302ND NPN + IS = 1.147E-012 + NF = 0.9743 + ISE = 1.81E-015 + NE = 1.121 + BF = 600 + IKF = 3 + VAF = 15 + NR = 0.974 + ISC = 3.648E-013 + NC = 2.393 + BR = 110 + IKR = 5 + VAR = 8.8 + RB = 14.4 + IRB = 0.0006 + RBM = 0.74 + RE = 0.038 + RC = 0.03 + XTB = 0 + EG = 1.11 + XTI = 3 + CJE = 5.681E-010 + VJE = 0.7622 + MJE = 0.3574 + TF = 1.2E-009 + XTF = 2.5 + VTF = 0.6 + ITF = 1 + PTF = 0 + CJC = 9.107E-011 + VJC = 0.04067 + MJC = 0.1902 + XCJC = 1 + TR = 4E-009 + CJS = 0 + VJS = 0.75 + MJS = 0.333 + FC = 0.1 .MODEL DIODE D + IS = 2.889E-014 + N = 1.004 + BV = 1000 + IBV = 0.001 + RS = 1000 + CJO = 0 + VJ = 1 + M = 0.5 + FC = 0 + TT = 0 + EG = 1.11 + XTI = 3 .ENDS *