* ********************************************************** * * PBSM5240PFH * * NXP Semiconductors * * BISS transistor with N-channel * IC = 2 A * VCEO = 40 V * hFE = 100 (min) @ 5V/100mA * * * * * Package pinning does not match Spice model pinning. * Package: SOT1118 * * Package Pin 1;4: Emitter;DRAIN * Package Pin 2;5: base;GATE * Package Pin 3;6: SOURCE;Collector * * * Extraction date (week/year): 06/2012 * Simulator: Spice 3 * ********************************************************** *# .SUBCKT PBSM5240PFH_PNP 1 2 3 * Q1 1 2 3 PBSM5240PFH_PNP D1 1 2 DIODE .MODEL PBSM5240PFH_PNP PNP + IS = 4.92E-014 + NF = 0.9731 + ISE = 7.355E-015 + NE = 1.335 + BF = 197 + IKF = 0.8 + VAF = 35 + NR = 0.9729 + ISC = 3.027E-013 + NC = 1.789 + BR = 34.59 + IKR = 0.5 + VAR = 18 + RB = 15 + IRB = 0.0018 + RBM = 1.05 + RE = 0.08732 + RC = 0.1097 + XTB = 0 + EG = 1.11 + XTI = 3 + CJE = 1.068E-010 + VJE = 0.7431 + MJE = 0.364 + TF = 1.01E-009 + XTF = 20 + VTF = 1.1 + ITF = 1.35 + PTF = 0 + CJC = 3.276E-011 + VJC = 0.3658 + MJC = 0.2968 + XCJC = 1 + TR = 1.9E-009 + CJS = 0 + VJS = 0.75 + MJS = 0.333 + FC = 0.8 .MODEL DIODE D + IS = 8.222E-015 + N = 1.047 + BV = 1000 + IBV = 0.001 + RS = 981.7 + CJO = 0 + VJ = 1 + M = 0.7 + FC = 0 + TT = 0 + EG = 1.11 + XTI = 3 .ENDS * ***************************************************************** * NXP PBSM5240PFH * * Polarity N-Channel * Ratings 30V/3.90E-01OHMS/1.78A * * Date Created Sun Dec 5 22:36:07 2010 * ***************************************************************** * Model Generated by Transim Technology * Copyright© 2004 * All Rights Reserved * UNPUBLISHED LICENSED SOFTWARE * www.transim.com * * Contains Proprietary Information Which * is The Property of Transim or it's licensees. * * Commercial Use or Resale Restricted by * Transim License Agreement. * ***************************************************************** * .SUBCKT PBSM5240PFH_NMOS DRAIN GATE SOURCE * LD DRAIN 5 4e-10 RLD2 DRAIN 5 1.0053088 RLD1 5 4 0.0028 LG GATE 1 8.81711084834576e-10 RLG GATE 1 2.21597978160436 LS SOURCE 8 1.09111405171669e-09 RLS2 SOURCE 8 2.74226639498611 RLS1 8 7 0.0300756805143418 * RDS 7 4 7500000000 TC=-0.05 * RS 6 7 0.0001 * RD 3 4 0.107818674595968 TC=0.0346177847138256,-0.00026425903070348 RBD 9 4 0.077122 TC=0.0346177847138256,-0.00026425903070348 DBD 7 9 DBD * M1 3 2 6 6 MINT * RGS 2 6 40000000000 CGS 2 6 4.8e-11 RG 1 2 49.9470486389713 * * CGD C11 11 12 1E-12 V11 11 0 0Vdc G11 3 2 VALUE { V(13, 0)*I(V11) } E11 12 0 3 2 1 E12 13 0 TABLE {V(12)} + -8 68 + -5 67 + -4 67 + -3 66 + -2 62 + -1 86 + -0.5 73 + -0.2 55 + -0.1 49 + 0 43.73 + 0.1 37.49 + 0.2 31.19 + 0.5 18.11 + 1 12.4 + 2 9.15 + 5 6.36 + 10 5 + 12 4.93 + 20 4.9 + 25 4.56 + 30 4.31 * * .MODEL MINT NMOS(Vto=0.7082260407 Kp=7.0844e-01 Nfs=50000000 Eta=2000 + Level=3 L=1e-4 W=1e-4 Gamma=0 Phi=0.6 Is=1e-24 + Js=0 Pb=0.8 Cj=0 Cjsw=0 Cgso=0 Cgdo=0 Cgbo=0 + Tox=1e-07 Xj=0 + U0=600 Vmax=0) * .MODEL DBD D(Bv=37.00 Ibv=1.00E-05 Rs=1E-6 Is=5.10745830399811e-13 + N=1 M=0.43 VJ=0.61 Fc=0.5 Cjo=1.524e-11 Tt=1.85e-08) * .ENDS *