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*
* PBHV9560Z
*
* Nexperia
*
* High voltage (BISS) PNP Transistor
* IC   = 0,5 A
* VCEO = 600 V 
* hFE  = typ. 130 @ 10V/50mA
*
*
*
*
* Package pinning does not match Spice model pinning.
* Package: SOT 223
* 
* Package Pin 1: Base
* Package Pin 2: Collector
* Package Pin 3: Emitter
* Package Pin 4: Collector
*
* Extraction date (week/year): 41/2022
* Spicemodel includes temperature dependency
*
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*#
* Please note: Diode D1 is dedicated to improve modeling in reverse
* mode of operation and does not reflect a physical device.
*
.SUBCKT PBHV9560Z 1 2 3
Q1 1 2 3 MAIN
D1 1 2 DIODE
*
.MODEL MAIN PNP
+ IS = 9.583E-14
+ NF = 0.9874
+ ISE = 2.196E-14
+ NE = 1.313
+ BF = 97
+ IKF = 0.01263
+ VAF = 14.06
+ NR = 0.9821
+ ISC = 6.793E-15
+ NC = 1.449
+ BR = 3.77
+ IKR = 0.3459
+ VAR = 234.4
+ RB = 7
+ IRB = 0.0002
+ RBM = 1.7
+ RE = 0.005598
+ RC = 0.1913
+ XTB = 1.741
+ EG = 1.11
+ XTI = 3.214
+ CJE = 4.751E-10
+ VJE = 0.6595
+ MJE = 0.3332
+ TF = 2.8E-09
+ XTF = 20
+ VTF = 5
+ ITF = 0.4
+ PTF = 0
+ CJC = 7.008E-11
+ VJC = 0.4
+ MJC = 0.3173
+ XCJC = 1
+ TR = 6E-05
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.7663
.MODEL DIODE D
+ IS = 4.683E-12
+ N = 1.024
+ BV = 1000
+ IBV = 0.001
+ RS = 117.9
+ CJO = 0
+ VJ = 1
+ M = 0.9
+ FC = 0
+ TT = 0
+ EG = 1.1
+ XTI = 2.368
.ENDS
*