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*
* PBHV9540Z
*
* Nexperia
*
* High voltage (BISS) PNP Transistor
* IC   = 0,5 A
* VCEO = 400 V 
* hFE  = min. 100 typ. 155 @ 10V/50mA
*
*
*
*
* Package pinning does not match Spice model pinning.
* Package: SOT 223
* 
* Package Pin 1: Base
* Package Pin 2: Collector
* Package Pin 3: Emitter
* Package Pin 4: Collector
*
* Extraction date (week/year): 32/2009
* Spicemodel does not include temperature dependency
*
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*#
* Please note: Diode D1 is dedicated to improve modeling in reverse
* mode of operation and does not reflect a physical device.
*
.SUBCKT PBHV9540Z 1 2 3
Q1 1 2 3 PBHV9540Z
D1 1 2 DIODE
*
.MODEL PBHV9540Z PNP 
+ IS = 4.16E-013 
+ NF = 0.9886 
+ ISE = 3.42E-014 
+ NE = 1.219 
+ BF = 157 
+ IKF = 0.025 
+ VAF = 7 
+ NR = 0.9953 
+ ISC = 1.494E-012 
+ NC = 1.22 
+ BR = 6.34 
+ IKR = 1.1 
+ VAR = 107 
+ RB = 4.2 
+ IRB = 0.0007 
+ RBM = 0.843 
+ RE = 0.02112 
+ RC = 0.09406 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 6.493E-010 
+ VJE = 0.7498 
+ MJE = 0.3828 
+ TF = 1.35E-009 
+ XTF = 50 
+ VTF = 5 
+ ITF = 1 
+ PTF = 0 
+ CJC = 9.748E-011 
+ VJC = 0.5 
+ MJC = 0.4525 
+ XCJC = 1 
+ TR = 2E-005 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.79 
.MODEL DIODE D 
+ IS = 1.021E-012 
+ N = 0.9698 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 304.2 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
*