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*
* PBHV9515QA
*
* Nexperia
*
* High voltage PNP bipolar Transistor
* IC   = 500 mA
* VCEO = 150 V 
* hFE  = typ. 205 @ 10V/100mA
*
*
*
*
* Package pinning does not match Spice model pinning!
* Package: SOT 1061
* 
* Package Pin 1 : base
* Package Pin 2 : Emitter
* Package Pin 3 : collector
* 
* 
* Extraction date (week/year): 37/2015
* Spicemodel includes temperature dependency
*
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*#
* Please note: Diode D1, Transistor Q2 and Resistor RQ 
* are dedicated to improve modeling of quasi
* saturation area and reverse mode operation
* and do not reflect physical devices
*
.SUBCKT PBHV9515QA 1 2 3
Q1 1 2 3 MAIN 0.4854
Q2 11 2 3 MAIN 0.5146
RQ 1 11 37.15
D1 1 2 DIODE
*
.MODEL MAIN PNP
+ IS = 8.853E-014
+ NF = 0.9944
+ ISE = 1.933E-014
+ NE = 1.34
+ BF = 238.6
+ IKF = 0.5
+ VAF = 74.41
+ NR = 0.99
+ ISC = 2.563E-014
+ NC = 1.234
+ BR = 6
+ IKR = 1.035
+ VAR = 113.2
+ RB = 16.5
+ IRB = 0.0005
+ RBM = 2.8
+ RE = 0.08326
+ RC = 0.00308
+ XTB = 1.821
+ EG = 1.11
+ XTI = 6.651
+ CJE = 1.095E-010
+ VJE = 0.7349
+ MJE = 0.3701
+ TF = 1.1E-009
+ XTF = 10
+ VTF = 1
+ ITF = 1
+ PTF = 0
+ CJC = 2.934E-011
+ VJC = 1.38
+ MJC = 0.6373
+ XCJC = 1
+ TR = 8E-008
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.7663
.MODEL DIODE D
+ IS = 1.634E-013
+ N = 1.02
+ BV = 1000
+ IBV = 0.001
+ RS = 261.4
+ CJO = 0
+ VJ = 1
+ M = 0.9
+ FC = 0
+ TT = 0
+ EG = 1.1
+ XTI = 3
.ENDS
*