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*
* PBHV9215Z
*
* Nexperia
*
* High voltage (BISS) PNP Transistor
* IC   = 2 A
* VCEO = 150 V 
* hFE  = min. 100 typ. 180 @ 10V/50mA
*
*
*
*
* Package pinning does not match Spice model pinning.
* Package: SOT 223
* 
* Package Pin 1: Base
* Package Pin 2: Collector
* Package Pin 3: Emitter
* Package Pin 4: Collector
*
* Extraction date (week/year): 34/2009
* Spicemodel does not include temperature dependency
*
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*#
* Please note: Diode D1 is dedicated to improve modeling in reverse
* mode of operation and does not reflect a physical device.
*
.SUBCKT PBHV9215Z 1 2 3
Q1 1 2 3 PBHV9215Z
D1 1 2 DIODE
*
.MODEL PBHV9215Z PNP 
+ IS = 3.757E-013 
+ NF = 0.9855 
+ ISE = 6.028E-014 
+ NE = 1.443 
+ BF = 173 
+ IKF = 0.23 
+ VAF = 5.7 
+ NR = 0.9859 
+ ISC = 1.835E-013 
+ NC = 1.248 
+ BR = 21.78 
+ IKR = 0.78 
+ VAR = 76 
+ RB = 10 
+ IRB = 4.4E-005 
+ RBM = 1.07 
+ RE = 0.03189 
+ RC = 0.01839 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 6.404E-010 
+ VJE = 0.7514 
+ MJE = 0.3856 
+ TF = 1.25E-009 
+ XTF = 50 
+ VTF = 5 
+ ITF = 1 
+ PTF = 0 
+ CJC = 1.35E-010 
+ VJC = 0.6553 
+ MJC = 0.4659 
+ XCJC = 1 
+ TR = 1.1E-007 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.79 
.MODEL DIODE D 
+ IS = 8.475E-014 
+ N = 0.9575 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 676.2 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
*