*********************************************************** * * PBHV9115X * * Nexperia * * High voltage (BISS) PNP Transistor * IC = 1 A * VCEO = 150 V * hFE = min. 100 typ. 220 @ 10V/50mA * * * * * Package pinning does not match Spice model pinning. * Package: SOT 89 * * Package Pin 1: Emitter * Package Pin 2: Collector * Package Pin 3: Base * Package Pin 4: Collector * * Extraction date (week/year): 02/2009 * Spicemodel does not include temperature dependency * ********************************************************** *# * Please note: Diode D1 is dedicated to improve modeling in reverse * mode of operation and does not reflect a physical device. * .SUBCKT PBHV9115X 1 2 3 Q1 1 2 3 PBHV9115X D1 1 2 DIODE * .MODEL PBHV9115X PNP + IS = 1.69E-013 + NF = 0.9862 + ISE = 5.503E-015 + NE = 1.2 + BF = 270 + IKF = 0.04 + VAF = 5 + NR = 0.996 + ISC = 4.6E-014 + NC = 1.194 + BR = 12 + IKR = 1.3 + VAR = 26 + RB = 19 + IRB = 0.005 + RBM = 0.7207 + RE = 0.05 + RC = 0.02 + XTB = 0 + EG = 1.11 + XTI = 3 + CJE = 1.794E-010 + VJE = 0.7684 + MJE = 0.3928 + TF = 1.4E-009 + XTF = 80 + VTF = 2 + ITF = 2.4 + PTF = 0 + CJC = 5.058E-011 + VJC = 0.1206 + MJC = 0.3 + XCJC = 1 + TR = 2E-008 + CJS = 0 + VJS = 0.75 + MJS = 0.333 + FC = 0.79 .MODEL DIODE D + IS = 1.645E-013 + N = 0.9725 + BV = 1000 + IBV = 0.001 + RS = 938.5 + CJO = 0 + VJ = 1 + M = 0.5 + FC = 0 + TT = 0 + EG = 1.11 + XTI = 3 .ENDS *