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*
* PBHV8560Z
*
* Nexperia
*
* High voltage (BISS) NPN Transistor
* IC   = 0,5 A
* VCEO = 600 V 
* hFE  = typ. 135 @ 10V/50mA
*
*
*
*
* Package pinning does not match Spice model pinning.
* Package: SOT 223
* 
* Package Pin 1: Base
* Package Pin 2: Collector
* Package Pin 3: Emitter
* Package Pin 4: Collector
*
* Extraction date (week/year): 01/2015
* Spicemodel includes temperature dependency
*
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*nt#
* Please note: Diode D1 is dedicated to improve modeling in reverse
* mode of operation and does not reflect a physical device.
*
.SUBCKT PBHV8560Z 1 2 3
Q1 1 2 3 MAIN
D1 2 1 DIODE
*
.MODEL MAIN NPN 
+ IS = 5.497E-014
+ NF = 0.9801
+ ISE = 1.963E-014
+ NE = 1.5
+ BF = 105
+ IKF = 0.07471
+ VAF = 28.42
+ NR = 0.9805
+ ISC = 5.582E-015
+ NC = 1.183
+ BR = 12
+ IKR = 2.173
+ VAR = 234.4
+ RB = 7
+ IRB = 1E-006
+ RBM = 6
+ RE = 0.0911
+ RC = 0.07938
+ XTB = 0.9976
+ EG = 1.11
+ XTI = 2.993
+ CJE = 8.606E-010
+ VJE = 0.6814
+ MJE = 0.3279
+ TF = 2.474E-009
+ XTF = 85.11
+ VTF = 2.466
+ ITF = 0.5434
+ PTF = 0
+ CJC = 4.489E-011
+ VJC = 0.4209
+ MJC = 0.4769
+ XCJC = 1
+ TR = 9E-005
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.7663
.MODEL DIODE D
+ IS = 3.427E-013
+ N = 1.008
+ BV = 1000
+ IBV = 0.001
+ RS = 686.7
+ CJO = 0
+ VJ = 1
+ M = 0.9
+ FC = 0
+ TT = 0
+ EG = 1.1
+ XTI = 3
.ENDS
*