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*
* PBHV8215Z
*
* Nexperia
*
* High voltage (BISS) NPN Transistor
* IC   = 2 A
* VCEO = 150 V 
* hFE  = 100 - 250 @ 10V/50mA
*
*
*
*
* Package pinning does not match Spice model pinning.
* Package: SOT 223
* 
* Package Pin 1: Base
* Package Pin 2: Collector
* Package Pin 3: Emitter
* Package Pin 4: Collector
*
* Extraction date (week/year): 34/2009 
* Spicemodel does not include temperature dependency
*
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*#
* Please note: Diode D1 is dedicated to improve modeling in reverse
* mode of operation and does not reflect a physical device.
*
.SUBCKT PBHV8215Z 1 2 3
Q1 1 2 3 PBHV8215Z
D1 2 1 DIODE
*
.MODEL PBHV8215Z NPN 
+ IS = 8.33E-013 
+ NF = 0.9923 
+ ISE = 1.587E-014 
+ NE = 1.407 
+ BF = 256.4 
+ IKF = 0.38 
+ VAF = 5.7 
+ NR = 0.9929 
+ ISC = 5.464E-014 
+ NC = 1.217 
+ BR = 55.31 
+ IKR = 2 
+ VAR = 75 
+ RB = 5.3 
+ IRB = 0.00105 
+ RBM = 1.12 
+ RE = 0.03768 
+ RC = 0.02356 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 6.166E-010 
+ VJE = 0.6711 
+ MJE = 0.3415 
+ TF = 1.25E-009 
+ XTF = 70 
+ VTF = 30 
+ ITF = 2 
+ PTF = 0 
+ CJC = 7.777E-011 
+ VJC = 0.4732 
+ MJC = 0.4065 
+ XCJC = 1 
+ TR = 5.7E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.79 
.MODEL DIODE D 
+ IS = 5.797E-014 
+ N = 1.012 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 330.7 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
*