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*
* PBHV8140Z
*
* Nexperia
*
* High voltage (BISS) NPN Transistor
* IC   = 1  A
* VCEO = 400 V 
* hFE  = min. 100 typ. 155 @ 10V/50mA
*
*
*
*
* Package pinning does not match Spice model pinning.
* Package: SOT 223
* 
* Package Pin 1: Base
* Package Pin 2: Collector
* Package Pin 3: Emitter
* Package Pin 4: Collector
*
* Extraction date (week/year): 32/2009 
* Spicemodel does not include temperature dependency
*
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*#
* Please note: Diode D1 is dedicated to improve modeling in reverse
* mode of operation and does not reflect a physical device.
*
.SUBCKT PBHV8140Z 1 2 3
Q1 1 2 3 PBHV8140Z
D1 2 1 DIODE
*
.MODEL PBHV8140Z NPN 
+ IS = 4.462E-013 
+ NF = 0.9921 
+ ISE = 3.216E-014 
+ NE = 1.376 
+ BF = 150 
+ IKF = 0.08 
+ VAF = 22 
+ NR = 0.9956 
+ ISC = 3.281E-013 
+ NC = 1.217 
+ BR = 18 
+ IKR = 1.15 
+ VAR = 65 
+ RB = 5.5 
+ IRB = 0.00045 
+ RBM = 0.91 
+ RE = 0.02888 
+ RC = 0.041 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 7.016E-010 
+ VJE = 0.6774 
+ MJE = 0.3313 
+ TF = 8E-010 
+ XTF = 15 
+ VTF = 5 
+ ITF = 0.1 
+ PTF = 0 
+ CJC = 5.387E-011 
+ VJC = 0.3496 
+ MJC = 0.3854 
+ XCJC = 1 
+ TR = 4E-006 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.79 
.MODEL DIODE D 
+ IS = 5.462E-013 
+ N = 0.9823 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 369.8 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
*