*********************************************************** * * PBHV8115Z * * Nexperia * * High voltage (BISS) NPN Transistor * IC = 1 A * VCEO = 150 V * hFE = min. 100 typ. 250 @ 10V/50mA * * * * * Package pinning does not match Spice model pinning. * Package: SOT 223 * * Package Pin 1: Base * Package Pin 2: Collector * Package Pin 3: Emitter * Package Pin 4: Collector * * Extraction date (week/year): 49/2007 * Spicemodel does not include temperature dependency * ********************************************************** *# * Please note: Diode D1 is dedicated to improve modeling in reverse * mode of operation and does not reflect a physical device. * .SUBCKT PBHV8115Z 1 2 3 Q1 1 2 3 PBHV8115Z D1 2 1 DIODE * .MODEL PBHV8115Z NPN + IS = 2.104E-013 + NF = 0.975 + ISE = 3.177E-014 + NE = 1.52 + BF = 308 + IKF = 0.052 + VAF = 5 + NR = 0.977 + ISC = 4.535E-014 + NC = 1.217 + BR = 34.7 + IKR = 0.9 + VAR = 26 + RB = 19 + IRB = 0.00037 + RBM = 2.2 + RE = 0.03379 + RC = 0.05563 + XTB = 0 + EG = 1.11 + XTI = 3 + CJE = 1.784E-010 + VJE = 0.679 + MJE = 0.3426 + TF = 1.5E-009 + XTF = 40 + VTF = 5 + ITF = 1.7 + PTF = 0 + CJC = 2.407E-011 + VJC = 0.1792 + MJC = 0.3 + XCJC = 1 + TR = 2E-009 + CJS = 0 + VJS = 0.75 + MJS = 0.333 + FC = 0.79 .MODEL DIODE D + IS = 5.56E-014 + N = 0.9573 + BV = 1000 + IBV = 0.001 + RS = 1027 + CJO = 0 + VJ = 1 + M = 0.5 + FC = 0 + TT = 0 + EG = 1.11 + XTI = 3 .ENDS *