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*
* PBHV3160Z
*
* Nexperia
*
* High voltage (BISS) PNP Transistor
* IC   = 0,1 A
* VCEO = 600 V 
* hFE  = typ. 130@ 10V/10mA
*
*
*
*
* Package pinning does not match Spice model pinning.
* Package: SOT 223
* 
* Package Pin 1: Base
* Package Pin 2: Collector
* Package Pin 3: Emitter
* Package Pin 4: Collector
*
* Extraction date (week/year): 02/2015
* Spicemodel includes temperature dependency
*
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*#
*
.SUBCKT PBHV3160Z 1 2 3
Q1 1 2 3 MAIN
D1 1 2 DIODE
*
* Diode D1 is dedicated to improve modeling in reverse
* mode of operation and does not reflect a physical device.
*
.MODEL MAIN PNP
+ IS = 2.239E-014
+ NF = 0.9917
+ ISE = 1.963E-014
+ NE = 1.5
+ BF = 95
+ IKF = 0.00377
+ VAF = 47.64
+ NR = 1.005
+ ISC = 5.582E-015
+ NC = 1.183
+ BR = 1.4
+ IKR = 0.2133
+ VAR = 234.4
+ RB = 38
+ IRB = 5E-005
+ RBM = 3.66
+ RE = 0.004573
+ RC = 0.3995
+ XTB = 1.183
+ EG = 1.11
+ XTI = 0.4037
+ CJE = 9.769E-011
+ VJE = 0.6816
+ MJE = 0.3206
+ TF = 2.665E-009
+ XTF = 700
+ VTF = 1.991
+ ITF = 0.5272
+ PTF = 0
+ CJC = 3.476E-011
+ VJC = 0.17
+ MJC = 0.1888
+ XCJC = 1
+ TR = 1E-008
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.7663
.MODEL DIODE D
+ IS = 1.117E-012
+ N = 1.024
+ BV = 1000
+ IBV = 0.001
+ RS = 126.5
+ CJO = 0
+ VJ = 1
+ M = 0.9
+ FC = 0
+ TT = 0
+ EG = 1.1
+ XTI = 3
.ENDS
*