********************************************************** * * PBHV2160Z * * Nexperia * * High voltage BISS-transistor NPN * IC = 0,1 A * VCEO = 600 V * hFE = typ. 125 @ 10V/10mA * * * * * Package pinning does not match Spice model pinning. * Package: SOT 223 * * Package Pin 1: Base * Package Pin 2: Collector * Package Pin 3: Emitter * Package Pin 4: Collector * * Extraction date (week/year): 02/2015 * Spicemodel includes temperature dependency * ********************************************************** *# * Please note: Diode D1 is dedicated to improve modeling in reverse * mode of operation and does not reflect a physical device. * .SUBCKT PBHV2160Z 1 2 3 Q1 1 2 3 MAIN D1 2 1 DIODE * .MODEL MAIN NPN + IS = 5.497E-014 + NF = 0.9801 + ISE = 2.512E-015 + NE = 1.243 + BF = 111 + IKF = 0.01093 + VAF = 37.61 + NR = 0.9801 + ISC = 3.057E-015 + NC = 1.198 + BR = 10.43 + IKR = 0.02018 + VAR = 33.23 + RB = 55 + IRB = 2.561E-005 + RBM = 9.3 + RE = 0.1259 + RC = 0.2629 + XTB = 0.9976 + EG = 1.11 + XTI = 0.4056 + CJE = 9.671E-011 + VJE = 0.6788 + MJE = 0.3276 + TF = 2.655E-009 + XTF = 600 + VTF = 1.659 + ITF = 0.115 + PTF = 0 + CJC = 7.245E-012 + VJC = 0.4 + MJC = 0.381 + XCJC = 1 + TR = 1E-008 + CJS = 0 + VJS = 0.75 + MJS = 0.333 + FC = 0.7022 .MODEL DIODE D + IS = 5.429E-013 + N = 1.096 + BV = 1000 + IBV = 0.001 + RS = 99.53 + CJO = 0 + VJ = 1 + M = 0.9 + FC = 0 + TT = 0 + EG = 1.1 + XTI = 3 .ENDS *