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*
* MJPE31C-Q
*
* Nexperia
*
* High power/low VCEsat NPN transistor
* IC   = 3 A
* VCEO = 100 V 
* hFE  = min. 25 @ 4V/1A
* 
*
*
*
* Package pinning does not match Spice model pinning.
* Package: SOT 428
* 
* Package Pin 1:    Base
* Package Pin 2/mb: Collector
* Package Pin 3:    Emitter
* 
*
* Extraction date (week/year): 32/2025
* Spicemodel includes temperature dependency
*
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*#
* Please note: Diode D1, Transistor Q2 and Resistor RQ 
* are dedicated to improve modeling of quasi
* saturation area and reverse mode operation
* and do not reflect physical devices
*
.SUBCKT MJPE31C_Q 1 2 3
Q1 1 2 3 Transistor 0.9071
Q2 11 2 3 Transistor 0.09287
RQ 11 1 8.395
D1 1 2 Diode
*
.MODEL Transistor NPN
+ IS = 4.898E-13
+ NF = 1.005
+ ISE = 1.003E-13
+ NE = 1.598
+ BF = 199.5
+ IKF = 1.948
+ VAF = 78.22
+ NR = 1.005
+ ISC = 6.683E-15
+ NC = 1.209
+ BR = 71.68
+ IKR = 0.8662
+ VAR = 3.037
+ RB = 20
+ IRB = 8E-05
+ RBM = 3.5
+ RE = 0.02025
+ RC = 0.006887
+ XTB = 0.3221
+ EG = 1.11
+ XTI = 1.136
+ CJE = 9.549E-10
+ VJE = 0.6967
+ MJE = 0.3124
+ TF = 7.516E-10
+ XTF = 15.09
+ VTF = 1.658
+ ITF = 1.313
+ PTF = 0
+ CJC = 6.446E-11
+ VJC = 0.1534
+ MJC = 0.3059
+ XCJC = 1
+ TR = 2E-06
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.3
.MODEL Diode D
+ IS = 1.57E-13
+ N = 1.029
+ BV = 1000
+ IBV = 0.001
+ RS = 148.4
+ CJO = 0
+ VJ = 1
+ M = 0.5
+ FC = 0
+ TT = 0
+ EG = 1.11
+ XTI = 3
.ENDS