********************************************************** * * MJD42C_Q * * Nexperia * * High power/low VCEsat PNP transistor * IC = 6 A * VCEO = 100 V * hFE = min. 15 @ 4V/3A * * * * * Package pinning does not match Spice model pinning. * Package: SOT 428 * * Package Pin 1: Base * Package Pin 2/mb: Collector * Package Pin 3: Emitter * * * Extraction date (week/year): 12/2021 * Spicemodel includes temperature dependency * ********************************************************** *# * Please note: Diode D1, Transistor Q2 and Resistor RQ * are dedicated to improve modeling of quasi * saturation area and reverse mode operation * and do not reflect physical devices. * .SUBCKT MJD42C_Q 1 2 3 Q1 1 2 3 Transistor 0.7215 Q2 11 2 3 Transistor 0.2785 RQ 11 1 1.854 D1 1 2 Diode * .MODEL Transistor PNP + IS = 4.853E-13 + NF = 1.003 + ISE = 3.436E-14 + NE = 1.391 + BF = 209.7 + IKF = 1.449 + VAF = 26.13 + NR = 1.003 + ISC = 6.683E-15 + NC = 1.209 + BR = 73.53 + IKR = 0.6192 + VAR = 7.802 + RB = 15 + IRB = 8E-05 + RBM = 2.6 + RE = 0.01863 + RC = 0.01346 + XTB = 1.607 + EG = 1.11 + XTI = 4.056 + CJE = 7.286E-10 + VJE = 0.7638 + MJE = 0.3696 + TF = 1.503E-09 + XTF = 12.69 + VTF = 1.044 + ITF = 3.274 + PTF = 0 + CJC = 5.866E-11 + VJC = 1 + MJC = 0.2219 + XCJC = 1 + TR = 1E-07 + CJS = 0 + VJS = 0.75 + MJS = 0.333 + FC = 0.2513 .MODEL DIODE D + IS = 9.29E-14 + N = 1.037 + BV = 1000 + IBV = 0.001 + RS = 180.6 + CJO = 0 + VJ = 1 + M = 0.5 + FC = 0 + TT = 0 + EG = 1.11 + XTI = 3 .ENDS *