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*
* MJD31CA
*
* Nexperia
*
* High power/low VCEsat NPN transistor
* IC   = 3 A
* VCEO = 100 V 
* hFE  = min. 25 @ 4V/1A
* 
*
*
*
* Package pinning does not match Spice model pinning.
* Package: SOT 428
* 
* Package Pin 1:    Base
* Package Pin 2/mb: Collector
* Package Pin 3:    Emitter
* 
*
* Extraction date (week/year): 12/2019
* Spicemodel includes temperature dependency
*
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*#
* Please note: Diode D1, Transistor Q2 and Resistor RQ 
* are dedicated to improve modeling of quasi
* saturation area and reverse mode operation
* and do not reflect physical devices
*
.SUBCKT MJD31CA 1 2 3
Q1 1 2 3 Transistor 0.9071
Q2 11 2 3 Transistor 0.09287
RQ 11 1 8.395
D1 2 1 Diode
*
.MODEL Transistor NPN
+ IS = 5.44E-13
+ NF = 1.023
+ ISE = 1.833E-14
+ NE = 1.268
+ BF = 180
+ IKF = 0.6151
+ VAF = 32.71
+ NR = 1.023
+ ISC = 6.683E-15
+ NC = 1.209
+ BR = 95.84
+ IKR = 0.9517
+ VAR = 31.3
+ RB = 40
+ IRB = 8E-05
+ RBM = 3.5
+ RE = 0.02025
+ RC = 0.01422
+ XTB = 1.122
+ EG = 1.11
+ XTI = 0.5173
+ CJE = 5.422E-10
+ VJE = 0.7368
+ MJE = 0.3253
+ TF = 6.964E-10
+ XTF = 19.47
+ VTF = 3.232
+ ITF = 1.377
+ PTF = 0
+ CJC = 1.706E-11
+ VJC = 0.5148
+ MJC = 0.1691
+ XCJC = 1
+ TR = 1.5E-06
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.3
.MODEL Diode D
+ IS = 1.57E-13
+ N = 1.004
+ BV = 1000
+ IBV = 0.001
+ RS = 162.6
+ CJO = 0
+ VJ = 1
+ M = 0.5
+ FC = 0
+ TT = 0
+ EG = 1.11
+ XTI = 3
.ENDS
*