*********************************************************** * * BF820W * * Nexperia * * High voltage NPN Transistor * IC = 50 mA * VCEO = 300 V * hFE = min. 50 @ 20V/25mA * * * * * Package pinning does not match Spice model pinning. * Package: SOT 323 * * Package Pin 1: Base * Package Pin 2: Emitter * Package Pin 3: Collector * * * Extraction date (week/year): 10/2019 * Spicemodel includes temperature dependency * ********************************************************** *# * Please note: Diode D1, Transistor Q2 and Resistor RQ * are dedicated to improve modeling of quasi * saturation area and reverse mode operation * and do not reflect physical devices. * .SUBCKT BF820W 1 2 3 Q1 1 2 3 MAIN 0.9248 Q2 11 2 3 MAIN 0.07518 RQ 1 11 378 D1 2 1 DIODE * .MODEL MAIN NPN + IS = 8.011E-15 + NF = 1 + ISE = 1.096E-15 + NE = 1.324 + BF = 156 + IKF = 0.01422 + VAF = 37.1 + NR = 0.9898 + ISC = 9.953E-15 + NC = 1.34 + BR = 3.591 + IKR = 0.01692 + VAR = 25 + RB = 100 + IRB = 2.5E-05 + RBM = 3.1 + RE = 0.4898 + RC = 1.065 + XTB = 1.453 + EG = 1.11 + XTI = 6.15 + CJE = 1.589E-11 + VJE = 0.676 + MJE = 0.3223 + TF = 9.985E-10 + XTF = 20.94 + VTF = 4.36 + ITF = 0.03 + PTF = 0 + CJC = 3.952E-12 + VJC = 0.4 + MJC = 0.3475 + XCJC = 1 + TR = 1E-06 + CJS = 0 + VJS = 0.75 + MJS = 0.333 + FC = 0.9552 .MODEL DIODE D + IS = 2.409E-14 + N = 0.9596 + BV = 1000 + IBV = 0.001 + RS = 422.1 + CJO = 0 + VJ = 1 + M = 0.5 + FC = 0 + TT = 0 + EG = 1.11 + XTI = 3 .ENDS *