*********************************************************** * * BCM847QAS * * Nexperia * * General purpose double NPN/NPN hFE matched transistors * IC = 100 mA * VCEO = 45 V * hFE = 200 - 450 @ 5V/2mA * * * * * Package pinning does not match Spice model pinning. * Package: SOT 1216 * * Package Pin 1;4: Emitter TR1;TR2 * Package Pin 2;5: Base TR1;TR2 * Package Pin 6;3: Collector TR1;TR2 * * * Extraction date (week/year): 09/2009 * Spicemodel includes temperature dependency * ********************************************************** *# * Please note: The following model is to be used twice in * schematic due to equality of both Transistors. * .SUBCKT BCM847QAS 1 2 3 * * Diode D1, Transistor Q2 and resistor RQ * are dedicated to improve modeling of quasi * saturation area and reverse mode operation * and do not reflect physical devices. * Q1 1 2 3 BCM847QAS 0.9289 Q2 11 2 3 BCM847QAS 0.07107 RQ 11 1 324.8 D1 2 1 DIODE * .MODEL BCM847QAS NPN + IS = 7.908E-015 + NF = 0.9767 + ISE = 5.297E-016 + NE = 1.344 + BF = 288 + IKF = 0.0524 + VAF = 25.24 + NR = 0.9794 + ISC = 2.622E-017 + NC = 1.227 + BR = 8.011 + IKR = 0.022 + VAR = 39 + RB = 76 + IRB = 0.00015 + RBM = 1.2 + RE = 0.4835 + RC = 0.2038 + XTB = 1.349 + EG = 1.11 + XTI = 10.09 + CJE = 1.12E-011 + VJE = 0.6645 + MJE = 0.3479 + TF = 4.1E-010 + XTF = 25 + VTF = 2 + ITF = 0.18 + PTF = 0 + CJC = 3.414E-012 + VJC = 0.5061 + MJC = 0.39 + XCJC = 1 + TR = 4E-009 + CJS = 0 + VJS = 0.75 + MJS = 0.333 + FC = 0.78 .MODEL DIODE D + IS = 7.905E-016 + N = 0.989 + BV = 1000 + IBV = 0.001 + RS = 2566 + CJO = 0 + VJ = 1 + M = 0.5 + FC = 0 + TT = 0 + EG = 1.11 + XTI = 3 .ENDS *